Abstract

Roshdy AbolAzayem El-Sayed AbdelRassoul
A New Very Low-Voltage, Low-Power CMOS RF Mixer
A new very low power RF mixer is introduced. The proposed mixer is based on two techniques: A CMOS transistor pair is applied to the four cross-coupled commutating transistor (the first technique), and current boosted technique, as described in the paper. The CMOS mixer is simulated in 0.18 ┬Ám CMOS technology. The mixer has an input signal of 0.2V and operates on a single 3.3V supply with transistor threshold voltages of 0.57V for all NMOS transistors and -0.52V for all PMOS transistors, and has a power issipation of 2.66 mW.